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  mch5908 no. a1218-1/6 features ? composite type with 2 j-fet contained in a mcph5 package currently in use, improving the mounting ef ciency greatly ? the mch5908 is formed with two chips, being equivalent to the 2sk3557, placed in one package speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d 1 unit 200 mw total power dissipation p t 300 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7021a-009 ordering number : ena1218a 91212 tkim/22410ac tkim tc-00002292 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : mcph5 ? jeita, jedec : sc-88a, sc-70-5, sot-353 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : drain1 2 : source1/source2 3 : drain2 4 : gate2 5 : gate1 sanyo : mcph5 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 54 123 54 123 k lot no. lot no. r a n k 5 4 13 2 MCH5908H-TL-E mch5908g-tl-e mch5908 n-channel silicon junction fet high-frequency ampli er, am ampli er, low-frequency ampli er applications tl
mch5908 no. a1218-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --15 v gate-to-source leakage current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.3 --0.7 --1.5 v zero-gate voltage drain current i dss v ds =5v, v gs =0v 10.0* 32.0* ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 24 35 ms input capacitance ciss v ds =5v, v gs =0v, f=1mhz 10.5 pf reverse transfer capacitance crss 3.5 pf noise figure nf v ds =5v, rg=1k , i d =1ma, f=1khz 1.0 db the speci cations shown above are for each individual j-fet. * : the mch5908 is classi ed by i dss as follows (unit : ma). rank g h i dss 10 to 20 16 to 32 ordering information device package shipping memo MCH5908H-TL-E mcph5 3,000pcs./reel pb free mch5908g-tl-e mcph5 3,000pcs./reel 0 0 i d -- v ds 20 16 12 8 4 0.4 0.8 1.2 1.6 2.0 2.4 itr02749 i d -- v ds --0.1v v gs =0v --0.2v --0.3v --0.4v - -0.5v --0.6v --0.7v 0 0 20 16 12 8 4 24681012 --0.1v --0.2v --0.3v --0.4v --0.5v --0.6v --0.7v itr02750 drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- ma drain current, i d -- ma v gs =0v i d -- v gs it04224 i d -- v gs itr02752 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 22 20 18 16 14 12 10 8 6 4 2 20ma i dss =30ma 15ma 10ma --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 4 2 6 8 12 10 14 16 75 c v ds =5v i dss =15ma 25 c ta=--25 c v ds =5v gate-to-source voltage, v gs -- v drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma
mch5908 no. a1218-3/6 crss -- v ds nf -- f itr02758 10 8 6 4 2 0.01 2 0.1 1.0 10 100 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma rg=1k drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf frequency, f -- khz noise figure, nf -- db it04227 ciss -- v ds v gs (off) -- i dss 7 10 23 5 3 3 2 1.0 7 5 v ds =5v i d =100 a drain current, i dss -- ma cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf ? y fs ? -- i d it04225 ? y fs ? -- i dss it04226 10 5 3 7 2 3 5 7 3 1.0 10 7 5235723 5 2 v ds =5v f=1khz i dss =15ma 30ma 7 10 23 5 10 2 3 5 7 100 v ds =5v v gs =0v f=1khz drain current, i d -- ma forward transfer admittance, ? yfs ? -- ms drain current, i dss -- ma forward transfer admittance, ? yfs ? -- ms it13692 3 10 1.0 2 10 2 357 7 5 3 2 1.0 v gs =0v f=1mhz it13691 23 57 23 3 3 1.0 10 10 5 7 2 v gs =0v f=1mhz nf -- rg itr02759 it15408 p t , p d -- ta 10 8 6 4 2 0.1 2 1.0 10 100 1000 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma f=1khz signal source resistance, rg -- k noise figure, nf -- db ambient temperature, ta -- c allowable power dissipation, p t , p d -- mw 0 20 40 60 80 100 120 140 160 0 350 300 250 200 150 50 100 p t total power dissipation p d 1unit
mch5908 no. a1218-4/6 taping speci cation MCH5908H-TL-E, mch5908g-tl-e
mch5908 no. a1218-5/6 outline drawing land pattern example MCH5908H-TL-E, mch5908g-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
mch5908 no. a1218-6/6 ps this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.


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